This invention relates to a semiconductive component comprising at least one layer of a p- type or n-type material, wherein one of said at least one layer of p- or n-type material is constituted by a metal hydride having a chosen dopant, said metal hydride and doping concentration being chosen so as to provide a chosen band gap so as to be transparent within a chosen part of the spectrum.
申请公布号
EP2562817(A1)
申请公布日期
2013.02.27
申请号
EP20120193329
申请日期
2009.02.09
申请人
INSTITUTT FOR ENERGITEKNIKK
发明人
ULYASHIN, ALEXANDER G.;KARAZHANOV, SMAGUL;HOLT, ARVE