发明名称 Semiconducting component
摘要 This invention relates to a semiconductive component comprising at least one layer of a p- type or n-type material, wherein one of said at least one layer of p- or n-type material is constituted by a metal hydride having a chosen dopant, said metal hydride and doping concentration being chosen so as to provide a chosen band gap so as to be transparent within a chosen part of the spectrum.
申请公布号 EP2562817(A1) 申请公布日期 2013.02.27
申请号 EP20120193329 申请日期 2009.02.09
申请人 INSTITUTT FOR ENERGITEKNIKK 发明人 ULYASHIN, ALEXANDER G.;KARAZHANOV, SMAGUL;HOLT, ARVE
分类号 H01L29/24;H01L31/032 主分类号 H01L29/24
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