发明名称 |
Thin film transistor and method of fabricating the same |
摘要 |
A thin film transistor includes a multi-coaxial silicon nanowire unit including a plurality of coaxial silicon nanowires on a substrate, the multi-coaxial silicon nanowire unit including a central portion and end portions of the central portion; a gate electrode on the central portion; and a source electrode and a drain electrode on the respective end portions, respectively, so as to electrically connect to the multi-coaxial silicon nanowire unit.
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申请公布号 |
US8384075(B2) |
申请公布日期 |
2013.02.26 |
申请号 |
US201213495583 |
申请日期 |
2012.06.13 |
申请人 |
LG DISPLAY CO., LTD.;CHAE GEE-SUNG;PARK MI-KYUNG |
发明人 |
CHAE GEE-SUNG;PARK MI-KYUNG |
分类号 |
H01L29/08 |
主分类号 |
H01L29/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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