| 摘要 |
<p>PURPOSE: A memory cell string stack sharing a body and a memory array using the same are provided to reduce an area occupied by a cell by forming a body connection member and a control electrode between the memory cell string stacks. CONSTITUTION: A semiconductor stack has a preset length in a first horizontal direction. Gate insulation layer stacks(7) include charge storage layers(5). A plurality of charge storage layers are separated in the first horizontal direction. A plurality of control electrodes(8a) are formed on each gate insulation layer stack. An isolation insulation layer is filled between the control electrodes and between the gate insulation layer stacks.</p> |
