Low 1C screw dislocation 3 inch silicon carbide wafer
摘要
A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1c screw dislocation density of less than about 2000 cm−2.
申请公布号
US8384090(B2)
申请公布日期
2013.02.26
申请号
US20070940454
申请日期
2007.11.15
申请人
CREE, INC.;POWELL ADRIAN;BRADY MARK;MUELLER STEPHAN G.;TSVETKOV VALERI F.;LEONARD ROBERT T.
发明人
POWELL ADRIAN;BRADY MARK;MUELLER STEPHAN G.;TSVETKOV VALERI F.;LEONARD ROBERT T.
