Vertical double diffused MOS transistor with a trench gate structure

摘要

A semiconductor device of the present invention includes vertical double diffused MOS transistor. A gate electrode of the vertical double diffused MOS transistor is disposed within a trench formed on a semiconductor substrate and projects from a surface of the semiconductor substrate. On a side surface of the gate electrode, a side wall is formed. On the surface of the semiconductor substrate and a surface of the gate electrode, a metal silicide film is formed.