发明名称 Direct bonding method with reduction in overlay misalignment
摘要 The method involves contacting wafers (100, 200) so as to initiate propagation of a bonding wave between the wafers. Predefined bonding curvature (KB) in shape of revolution parabolic is imposed to one of the wafers as a function of inherent curvature before bonding the wafer comprising a series of micro components (110) while the other wafer is free to conform to the predefined bonding curvature. The curvature of each wafer is measured before bonding, and the predefined bonding curvature is calculated. An independent claim is also included for an apparatus for bonding wafers by molecular adhesion, comprising a holding support.
申请公布号 KR101236219(B1) 申请公布日期 2013.02.22
申请号 KR20110077449 申请日期 2011.08.03
申请人 发明人
分类号 H01L21/20 主分类号 H01L21/20
代理机构 代理人
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