| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that achieves miniaturization while suppressing a short-channel effect and achieves low power consumption. <P>SOLUTION: A semiconductor device includes: a first inverter composed of a first transistor and a second transistor that are superimposed; a second inverter composed of a third transistor and a fourth transistor that are superimposed; a first selection transistor; and a second selection transistor. An output terminal of the first inverter, an input terminal of the second inverter, and one of a source and a drain of the first selection transistor are connected, and an output terminal of the second inverter, an input terminal of the first inverter, and one of a source and a drain of the second selection transistor are connected, thereby forming a miniaturized SRAM circuit. <P>COPYRIGHT: (C)2013,JPO&INPIT |
