SILICON SINGLE CRYSTAL WAFER MANUFACTURING METHOD AND SILICON SINGLE CRYSTAL WAFER EVALUATION METHOD

摘要

PROBLEM TO BE SOLVED: To provide a silicon single crystal wafer without deterioration of GOI even when a gate oxide film thickness is as thin as several nanometers and a manufacturing method of the same; and provide an evaluation method which can evaluate absence of GOI deterioration easily in comparison with a TDDB method.

SOLUTION: A silicon single crystal wafer manufacturing method at least comprises the steps of: preparing a silicon single crystal ingot; manufacturing a plurality of sliced substrates by slicing the silicon single crystal ingot; performing at least one of lapping, etching and sanding on the plurality of sliced substrate to obtain a plurality of processed substrates; picking at least one substrate from the plurality of substrates; measuring surface roughness of the picked substrate in the picking step by AFM and calculating an amplitude (strength) of a frequency band corresponding to a wavelength of 20 nm-50 nm to determine acceptance/rejection; and transmitting the substrate to a next process when accepted and performing refabrication when rejected.

COPYRIGHT: (C)2013,JPO&INPIT