发明名称 SILICONE EMBEDDED GLASS SUBSTRATE AND MANUFACTURING METHOD THEREFOR, SILICONE EMBEDDED GLASS MULTILAYER SUBSTRATE AND MANUFACTURING METHOD THEREFOR, AND ELECTROSTATIC ACCELERATION SENSOR
摘要 <P>PROBLEM TO BE SOLVED: To provide a silicon embedded glass substrate in which silicon is embedded with high location accuracy and which has small warpage, and a manufacturing method for the silicon embedded glass substrate. <P>SOLUTION: In a silicon embedded glass substrate, silicon is embedded in a glass substrate having a first principal surface and a second principal surface. The glass substrate includes a first glass layer and a second glass layer which have linear expansion coefficients differing from each other. A surface of the first glass layer makes up the first principal surface, and a surface of the second glass layer makes up the second principal surface. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013036829(A) 申请公布日期 2013.02.21
申请号 JP20110172677 申请日期 2011.08.08
申请人 PANASONIC CORP 发明人 OKUMURA MAKOTO
分类号 G01P15/125 主分类号 G01P15/125
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