UNDERLAYER FILM-FORMING MATERIAL FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, AND PATTERN FORMATION METHOD

摘要

Provided is a novel underlayer film-forming material and such for lithography, said material having a high carbon concentration and a low oxygen concentration, and exhibiting relatively high heat resistance and solvent solubility. Moreover, a wet process can be applied to said underlayer film-forming material for lithography. This underlayer film-forming material for lithography is characterized by containing a compound represented by general formula (1). (In formula (1), each X independently represents an oxygen atom or a sulfur atom; each R1 independently represents a single bond or a C1-30 2n valent hydrocarbon group, wherein said hydrocarbon group may have a cyclic hydrocarbon group, a double bond, a hetero atom, or a C6-30 aromatic group; each R2 independently represents a C1-10 linear, branched or cyclic alkyl group, a C6-10 aryl group, a C2-10 alkenyl group, or a hydroxyl group, at least one R2 being a hydroxyl group; each m independently represents an integer between 1 and 6; and n represents an integer between 1 and 4.)