THIN-FILM PHOTOELECTRIC CONVERSION ELEMENT

摘要

A thin-film photoelectric conversion element, provided with a light-transmitting substrate (1) having a principal obverse surface, and, layered on the principal obverse surface in order from the side nearer the light-transmitting substrate (1), a transparent electrode layer (2), a p-type semiconductor layer (3p), an i-type semiconductor layer (3i) functioning as a light-absorbing layer, an n-type semiconductor layer (3n), a reverse-surface transparent electrode layer (4), and a reverse-surface reflecting film (5). At the bonding interface between the n-type semiconductor layer (3n) and the reverse-surface transparent electrode layer (4), if the vacuum level is taken to be zero and the work function of a substance is defined as a negative value, the relationship between the work function Fsmi of the n-type semiconductor layer (3n) and the work function Fox of the reverse-surface transparent electrode layer (4) at the bonding interface is Fsmi ox.