SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having a lateral bipolar transistor which enables obtaining excellent contact with an emitter polysilicon, and a manufacturing method of the semiconductor device.

SOLUTION: A semiconductor device having a lateral bipolar transistor including: a substrate composing a first conductive layer; an n-hill layer 312 arranged on the first conductive layer; an open region opened on an element isolation oxide film 320 surrounding the n-hill layer 312; a polysilicon film 910 formed on the open region; an emitter region solid-phase diffused from the polysilicon film 910; and a dummy gate polysilicon 706 formed in the element isolation oxide film 320. The dummy gate polysilicon 706 controls a shape of the emitter region solid-phase diffused from the polysilicon film 910.

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