| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting device and a manufacturing method of the same, which can ensure manufacturing stability with achieving improvement of light extraction efficiency. <P>SOLUTION: A light-emitting device 10 is an individual piece obtained by dividing a single crystal substrate composed of light permeable GaN in which an n-type semiconductor layer, a luminescent layer and a p-type semiconductor layer are laminated as semiconductor layers. Assuming that a top surface of a light permeable substrate 11 which is an individual substrate obtained by dividing the single crystal substrate of the light-emitting device 10 is an m-plane (1-100) plane, one side face S1 and a side face S2 opposite to the one side face S1 are m-planes (1-100) planes, and another side face S3 adjacent to the one side face S1 and a side face S4 opposite to the other side face S3 are semipolar planes (1-101) planes. Further, assuming that the top surface is a c-plane (0001) plane, the one side face S1 and the side face S2 opposite to the one side face S1 are semipolar planes (1-101) planes, and the other side face S3 adjacent to the one side face S1 and the side face S4 opposite to the other side face S3 are semipolar planes (11-21) planes. <P>COPYRIGHT: (C)2013,JPO&INPIT |
