发明名称 METHOD AND DEVICE OF MANUFACTURING NICKEL-INCLUDING FULLERENE
摘要 <P>PROBLEM TO BE SOLVED: To solve a problem in which, regarding nickel-including fullerene of which application to spintronics devices, mono-molecular magnetic devices, and the like is anticipated, synthesis of the nickel-including fullerene is difficult because efficient electron transfer does not occur between a transition metal, represented by iron, nickel, or the like, and fullerene, and metal atoms detach from the fullerene during formation. <P>SOLUTION: An electron beam is irradiated onto nickel metal that is placed in a crucible. Electrons are collided with the evaporated nickel atoms, and plasma composed of electrons and nickel ions is formed. As a result of reaction between the plasma and fullerene, a deposition containing nickel-including fullerene is formed on a deposit substrate. As a result of the emission current of the electron beam being controlled, highly efficient synthesis of nickel-including fullerene becomes possible. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013035725(A) 申请公布日期 2013.02.21
申请号 JP20110174235 申请日期 2011.08.09
申请人 TOHOKU UNIV;KASAMA YASUHIKO 发明人 KANEKO TOSHIRO;HATAKEYAMA RIKIZO;KASAMA YASUHIKO
分类号 C01B31/02;B82Y30/00;B82Y40/00 主分类号 C01B31/02
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