| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resistance change memory capable of preventing aggregation of a metal composing an ion source electrode, and to provide a manufacturing method therefor. <P>SOLUTION: The resistance change memory comprises: a first interconnection; a second interconnection provided above the first interconnection so as to cross the first interconnection; a third interconnection provided above the second interconnection so as to cross the second interconnection; a first resistance change element provided in the intersection region of the first and second intersections and having a first resistance change layer provided on the first interconnection, and an ion source electrode including a metal ion source provided on the first resistance change layer so as to penetrate the second intersection and to be connected therewith; and a second resistance change element provided in the intersection region of the second and third intersections and having a second resistance change layer provided on the ion source electrode. <P>COPYRIGHT: (C)2013,JPO&INPIT |
