发明名称 |
METHOD FOR MEASURING DEFECTS IN A SILICON SUBSTRATE |
摘要 |
A method for measuring defects in a silicon substrate obtained by silicon ingot pulling, wherein the defects have a size of less than 20 nm. The method includes applying a first defect consolidation heat treatment to the substrate at a temperature of between 750 and 850° C. for a time of between 30 minutes and 1 hour to consolidate the defects; applying a second defect enlargement heat treatment to the substrate at a temperature of between 900 and 1000° C. for a time of between 1 hour and 10 hour to enlarge the defects to a size of greater than or equal to 20 nm, with the enlarged defects containing oxygen precipitates; measuring size and density of the enlarged defects in a surface layer of the substrate; and calculating the initial size of the defects on the basis of the measurements of the enlarged defects. |
申请公布号 |
US2013045583(A1) |
申请公布日期 |
2013.02.21 |
申请号 |
US201213547763 |
申请日期 |
2012.07.12 |
申请人 |
SOITEC;REYNAUD PATRICK;GOURDEL CHIRSTOPHE |
发明人 |
REYNAUD PATRICK;GOURDEL CHIRSTOPHE |
分类号 |
G01N21/47;H01L21/762 |
主分类号 |
G01N21/47 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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