| 摘要 |
<p>The present invention provides a silicon carbide semiconductor device having an ohmic electrode improved in adhesion of a wire thereto by preventing deposition of carbon so as not to form a Schottky contact, as well as a method for manufacturing such a silicon carbide semiconductor device. In the SiC semiconductor device, upon forming the ohmic electrode, a first metal layer (12) made of one first metallic element is formed on one main surface of a SiC layer (11). Further, a Si layer (13) made of Si is formed on an opposite surface of the first metal layer to its surface facing the SiC layer (11). The stacked structure (10A) thus formed is subjected to thermal treatment. In this way, there can be obtained a silicon carbide semiconductor device having an ohmic electrode adhered well to a wire by preventing deposition of carbon atoms on the surface layer of the electrode and formation of a Schottky contact resulting from Si and SiC.</p> |
