| 摘要 |
PURPOSE: A magnetic random access memory is provided to reduce an area of a memory cell in a magnetic wall moving type MRAM by sharing an nMOS transistor, a magnetization pinned layer, a magnetization pinned region, and a write bit line. CONSTITUTION: A memory cell line(1) includes a magnetic writing layer(4), a magnetization pinned layer, a reference layer(6-1 to 6-3), a spacer layer(5-1 to 5-3), and an nMOS transistor(2-1 to 2-4). The spacer layer and the reference layer are located between the magnetization pinned layers. The magnetization pinned layer has reversely pinned magnetization. The reference layer has the pinned magnetization. The nMOS transistor is installed between a write bit line and the magnetization pinned layer. [Reference numerals] (1) Memory cell line; (11) Word line; (12-1) Writing bit line; (13-1) Reading bit line; (2-1) NMOS transistor; (3-1) Magnetization fixing layer; (4) Magnetic writing layer; (5-3) Spacer layer; (6-3) Reference layer; (C2) Memory cell |
