SINGLE-CRYSTAL SUBSTRATE, SINGLE-CRYSTAL SUBSTRATE HAVING CRYSTALLINE FILM, CRYSTALLINE FILM, METHOD FOR PRODUCING SINGLE-CRYSTAL SUBSTRATE HAVING CRYSTALLINE FILM, METHOD FOR PRODUCING CRYSTALLINE SUBSTRATE, AND METHOD FOR PRODUCING ELEMENT

摘要

Provided are a single-crystal substrate for epitaxial growth on which a crystalline film may be formed with stress thereon being suppressed or eliminated, a single-crystal substrate having a crystalline film, a crystalline film, a method of producing a single-crystal substrate having a crystalline film, a method of producing a crystalline substrate, and an element producing method. A roughened surface is formed on at least a partial region of a surface of a single-crystal substrate used for forming a crystalline film by epitaxial growth, then, a single-crystalline film is formed by epitaxial growth on a roughened-surface unformed surface on which the roughened surface is not formed, and a crystalline film having low crystallinity than the single-crystalline film is formed by epitaxial growth on a roughened-surface formed surface of the single-crystal substrate, the single-crystal substrate having a crystalline film being formed by the crystalline film including at least the single-crystalline film and the crystalline film having inferior crystallinity to the single-crystalline film, and the single-crystal substrate.