发明名称 PLURAL PHOTO-DIODE TARGET ARRAY
摘要 A plural photo-diode array, used as a target for silicon visicon image transmitting apparatus, employs a substrate having an impurity concentration profile which decreases about one substrate surface. The diodes are formed by diffused areas at that substrate surface comprising an impurity of opposite conductivity types.
申请公布号 US3697832(A) 申请公布日期 1972.10.10
申请号 USD3697832 申请日期 1971.01.21
申请人 NIPPON ELECTRIC CO. LTD. 发明人 MASAFUMI HANAOKA
分类号 H01J29/45;H01L27/00;H01L31/10;(IPC1-7):H01L15/00 主分类号 H01J29/45
代理机构 代理人
主权项
地址