| 摘要 |
<p>The present invention provides a power semiconductor arrangement (1) comprising a base plate (2) comprising a molybdenum layer (4), and a power semiconductor device (3) mounted to a top side of the base plate (2) and electrically and thermally coupled thereto, whereby the base plate (2) comprises a metallic mounting base (6), which is arranged between the semiconductor device (3) and the molybdenum layer (4) and prevents the molybdenum layer (4) from forming highly resistive intermetallic phases with the semiconductor device (3). The present invention further provides a power semiconductor module, with multiple power semiconductor arrangements, whereby the base plate (2) of the power semiconductor arrangements (1) is a common base plate (2). The present invention also provides a module assembly, especially a power semiconductor module assembly, comprising multiple power semiconductor modules, whereby the power semiconductor modules are arranged side by side to each other with electric connections between adjacent semiconductor modules.</p> |
