发明名称 |
Method of forming a semiconductor device |
摘要 |
A method of forming a semiconductor device includes filling a gap of a semiconductor chip stack while carrying out a first heating process which heats the semiconductor chip stack from upper and lower portions of the semiconductor chip stack.
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申请公布号 |
US8377745(B2) |
申请公布日期 |
2013.02.19 |
申请号 |
US201113104560 |
申请日期 |
2011.05.10 |
申请人 |
ELPIDA MEMORY;SHIMADA NORIOU;FUJISHIMA TOMOYUKI |
发明人 |
SHIMADA NORIOU;FUJISHIMA TOMOYUKI |
分类号 |
H01L21/44;H01L21/48;H01L21/50 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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