发明名称 RF AMPLIFIER
摘要 <p>PURPOSE: A RF amplifier is provided to suppress performance degradation due to the parasitic capacitance component, by performing impedance conversion from the base and to the RF band. CONSTITUTION: A low noise amplifier comprises an input unit(110), a cascode unit(120), a loader(130), and a gain controlling unit(140). The gain controlling unit controls the gain by using the impedance conversion property between the base band and the RF band. The gain controlling unit is formed to perform operation in the base band. The gain controlling unit controls the gain by controlling the impedance at the base band. The gain controlling unit controls gain by using the impedance of the base band seen from the RF band. [Reference numerals] (110) Input unit; (120) Cascode unit; (130) Loader; (140) Gain controlling unit</p>
申请公布号 KR20130016880(A) 申请公布日期 2013.02.19
申请号 KR20110079063 申请日期 2011.08.09
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KWON, KU DUCK
分类号 H03F1/26;H03G3/30 主分类号 H03F1/26
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