发明名称 |
Memory arrays where a distance between adjacent memory cells at one end of a substantially vertical portion is greater than a distance between adjacent memory cells at an opposing end of the substantially vertical portion and formation thereof |
摘要 |
Memory arrays and their formation are disclosed. One such memory array has a string of series-coupled memory cells with a substantially vertical portion. A distance between adjacent memory cells at one end of the substantially vertical portion is greater than a distance between adjacent memory cells at an opposing end of the substantially vertical portion. For other embodiments, thicknesses of respective control gates of the memory cells and/or thicknesses of the dielectrics between successively adjacent control gates may increase as the distances of the respective control gates/dielectrics from the opposing end of the substantially vertical portion increase.
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申请公布号 |
US8378412(B2) |
申请公布日期 |
2013.02.19 |
申请号 |
US20100903264 |
申请日期 |
2010.10.13 |
申请人 |
MICRON TECHNOLOGY, INC.;GODA AKIRA |
发明人 |
GODA AKIRA |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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