发明名称 |
Method for fabricating a non-volatile memory device |
摘要 |
A method for fabricating a non-volatile memory device with asymmetric source/drain junctions, wherein a gate stack is formed on a semiconductor substrate, and impurity ions are implanted at a predetermined angle to form a source/drain junction in the semiconductor substrate. Thermal treatment of the semiconductor substrate forms an asymmetrically disposed source/drain junction between adjacent gate stacks.
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申请公布号 |
US8377782(B2) |
申请公布日期 |
2013.02.19 |
申请号 |
US201113338048 |
申请日期 |
2011.12.27 |
申请人 |
HYNIX SEMICONDUCTOR INC.;HONG YOUNG OK;LEE MYUNG SHIK |
发明人 |
HONG YOUNG OK;LEE MYUNG SHIK |
分类号 |
H01L29/72 |
主分类号 |
H01L29/72 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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