Nitride semiconductor light-emitting device and method for manufacturing the same

摘要

Provided are a nitride semiconductor light-emitting device and a method for manufacturing the same, capable of improving light emitting efficiency by forming a reflection layer on a lateral side of an LED chip. An embodiment provides a nitride semiconductor light-emitting device includes a light-emitting device chip and a reflection layer. The reflection layer is formed on a lateral side of the light-emitting device chip.