| 摘要 |
PURPOSE: A plasma generating unit and a plasma processing apparatus are provided to minimize the vortex of gas by nearly inducing gas flow near a plasma source. CONSTITUTION: A plasma processing apparatus(30) includes a processing chamber(100) and a plasma generation unit(200). The processing chamber processes a substrate using plasma. The plasma generation unit generates the plasma used for processing the substrate. The plasma generation unit provides the plasma to the processing chamber in a downstream mode. The processing chamber comprises a processing chamber(120), a substrate support member(140), a lead(160), and a baffle(180). The substrate support member is arranged in a process space of the processing chamber. The substrate support member comprises a spin chuck(142) and a driving shaft(144). The baffle is combined with an opened top of the processing chamber in order to face the spin chuck. |
