发明名称 CVD REACTOR COMPRISING AN RF-HEATED TREATMENT CHAMBER
摘要 The invention concerns a deposition device in particular of crystalline coatings on at least one substrate in particular crystalline. Said device comprises a treatment chamber (5) consisting of a number of wall elements (1, 2, 3, 4), said wall elements (1, 2, 3, 4) being electroconductive and placed end-to-end, thus forming contacts (2′, 2″, 3′, 3″); a reactor housing (6) enclosing the wall elements (1, 2, 3, 4) of the treatment chamber and made of a non-electroconductive material and a RF-heated coil surrounding the wall elements (1, 2, 3, 4) of the treatment chamber. The invention is characterized in that a massive single-piece shield heating pipe (8) is implanted between the reactor housing (6) and the walls (1, 2, 3, 4) of the treatment chamber. The material of said pipe is electroconductive so that it is heated by the eddy currents induced therein by the RF field generated by the RF coil and so that it absorbs considerably the RF field and heats the walls (1, 2, 3, 4) of the treatment chamber.
申请公布号 KR101234151(B1) 申请公布日期 2013.02.18
申请号 KR20077013640 申请日期 2005.12.12
申请人 发明人
分类号 H01L21/00 主分类号 H01L21/00
代理机构 代理人
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