| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a diode having negative resistance and a rectifier function. <P>SOLUTION: A semiconductor device comprises: a first semiconductor layer 11 of a first conductivity type; a second semiconductor layer 12 of a second conductivity type; and a third semiconductor layer 13 of the first conductivity type. The second semiconductor layer is formed between the first semiconductor layer and the third semiconductor layer, and the first semiconductor layer and the second semiconductor layer are in contact with each other. Energy E<SB POS="POST">C1</SB>at a conduction-band lower end of the first semiconductor layer is lower than energy E<SB POS="POST">V2</SB>at a conduction-band upper end of the second semiconductor layer, and the energy E<SB POS="POST">V2</SB>at the conduction-band upper end of the second semiconductor layer is substantially the same as energy E<SB POS="POST">C3</SB>at a conduction-band lower end of the third semiconductor layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
