| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent a crystal quality from varying in a crystal axis direction. <P>SOLUTION: The silicon single crystal ingot is pulled up from a silicon melt 12 into which nitrogen is doped. The silicon single crystal ingot has a region where vacancy-type defects occur at least at the center of a cross section. The outer diameter of a bottom-side ingot is larger than that of a top-side ingot. <P>COPYRIGHT: (C)2013,JPO&INPIT |
