| 发明名称 |
METHOD FOR REMOVING METAL DEPOSIT, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for removing metal deposits and a substrate processing apparatus which allow substrate processing with an organic compound gas to be cleanly performed. <P>SOLUTION: The method for removing metal deposits controls a temperature in a processing container having therein a processing space for processing a substrate to be processed on which a metal layer is formed, and a pressure in the processing space so as to sublimate metal deposits deposited inside the processing container. <P>COPYRIGHT: (C)2013,JPO&INPIT |
| 申请公布号 |
JP2013033996(A) |
申请公布日期 |
2013.02.14 |
| 申请号 |
JP20120232362 |
申请日期 |
2012.10.19 |
| 申请人 |
FUJITSU SEMICONDUCTOR LTD;TOKYO ELECTRON LTD |
发明人 |
MIYOSHI SHUSUKE;ISHIKAWA KENJI;TATEISHI HIDEKI;HAYASHI MASAKAZU;NISHIKAWA NOBUYUKI |
| 分类号 |
H01L21/3065;H01L21/304;H01L21/3205;H01L21/3213;H01L21/768;H01L23/532 |
主分类号 |
H01L21/3065 |
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