发明名称 |
PATTERN FORMING METHOD, MULTILAYER RESIST PATTERN, MULTILAYER FILM FOR DEVELOPMENT WITH ORGANIC SOLVENT, RESIST COMPOSITION, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern forming method, by which a pattern with good line width roughness (LWR) and a rectangular profile can be formed, and to provide a multilayer resist pattern formed by the method, a multilayer film for development with an organic solvent suitably used for the pattern forming method, and a resist composition suitably used for the pattern forming method, a method for manufacturing an electronic device, and an electronic device. <P>SOLUTION: The pattern forming method includes steps of: (1) forming a first film on a substrate by using a first resin composition (I); (2) forming a second film on the first film by using a second resin composition (II) different from the resin composition (I); (3) exposing a multilayer film having the first film and the second film; (4) developing the first film and the second film in the exposed multilayer film by using a developing solution containing an organic solvent to form a negative pattern. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2013033227(A) |
申请公布日期 |
2013.02.14 |
申请号 |
JP20120143050 |
申请日期 |
2012.06.26 |
申请人 |
FUJIFILM CORP |
发明人 |
KATO KEITA;SHIRAKAWA MICHIHIRO;OTANI TADAHIRO;NAKAMURA ATSUSHI;TAKAHASHI HIDETOMO;IWATO KAORU |
分类号 |
G03F7/095;G03F7/038;G03F7/039;G03F7/11;G03F7/32;H01L21/027 |
主分类号 |
G03F7/095 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|