| 摘要 |
PURPOSE: A semiconductor memory device is provided to improve a refresh property by decreasing a leakage current generated in a bridge. CONSTITUTION: A reference voltage generating unit(21) generates a first reference voltage whose level becomes high according as an internal temperature falls and a second reference voltage whose level becomes low according as the internal temperature falls. A level control unit(22) reduces an absolute value of an internal voltage according as the internal temperature falls in response to the first and second reference voltages. A constant current source generates a constant current by compensating the change of the internal temperature. A first level setting unit sets the level of the first reference voltage by receiving the constant current. A second level setting unit sets the level of the second reference voltage by receiving the constant current. [Reference numerals] (1) Internal voltage generating circuit; (21) Reference voltage generating unit; (22) Level control unit
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