发明名称 |
MAGNETIC TUNNELING JUNCTION DEVICES, MEMORIES, MEMORY SYSTEMS, AND ELECTRONIC DEVICES |
摘要 |
Provided is a magnetic tunneling junction device including a first structure including a magnetic layer; a second structure including at least two extrinsic perpendicular magnetization structures, each including a magnetic layer and; a perpendicular magnetization inducing layer on the magnetic layer; and a tunnel barrier between the first and second structures.
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申请公布号 |
US2013042081(A1) |
申请公布日期 |
2013.02.14 |
申请号 |
US201213398640 |
申请日期 |
2012.02.16 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;PARK JEONG HEON;LIM WOO CHANG;OH SE CHUNG;KIM YOUNG HYUN;PARK SANG HWAN;LEE JANG EUN |
发明人 |
PARK JEONG HEON;LIM WOO CHANG;OH SE CHUNG;KIM YOUNG HYUN;PARK SANG HWAN;LEE JANG EUN |
分类号 |
G06F12/00;H01L43/06 |
主分类号 |
G06F12/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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