POWER SEMICONDUCTOR MODULE

摘要

PROBLEM TO BE SOLVED: To provide a power semiconductor module which can deliver high performance without using a large heat dissipation member.

SOLUTION: A power semiconductor module (1) of the present invention comprises: a first ceramic substrate (11); a first conductive layer (21) arranged on one principal surface of the first ceramic substrate; a second conductive layer (22) arranged on another principal surface of the first ceramic substrate in a region opposite to the first conductive layer; transistors (33a, 33b) composed of a material having wider bandgap than silicon and arranged on a surface of the first conductive layer; a connection member (35a) electrically connecting the first conductive layer and the second conductive layer such that a reverse current change occurs in the first conductive layer and the second conductive layer by switching of the transistors; a second ceramic substrate (12) arranged such that one principal surface contacts a surface of the second conductive layer; and a third conductive layer (23) arranged on another principal surface of the second ceramic substrate so as to be insulated from the second conductive layer.

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