| 摘要 |
<P>PROBLEM TO BE SOLVED: To further improve the conversion efficiency of a solar cell. <P>SOLUTION: A second semiconductor layer 104 is epitaxially grown, between a plurality of mask patterns 103, from the surface of a first semiconductor layer 102, and the second semiconductor layer is formed by the epitaxial growth process until its surface becomes flat. A third semiconductor layer 105 is formed also by an epitaxial growth process on the second semiconductor layer 104 thus grown. A plurality of groves 131 are also provided which have the width smaller than that of the mask patterns 103 and are disposed at the center part of each master pattern 103. The groves 131 are formed from the surface of the second semiconductor layer 104 to the depth of at least the middle of the second semiconductor layer 104. <P>COPYRIGHT: (C)2013,JPO&INPIT |
