| 摘要 |
A field-effect transistor includes a semiconductor layer containing carbon nanomaterials; a first electrode and a second electrode formed in contact with the semiconductor layer; a third electrode for controlling current flowing between the first electrode and the second electrode; and an insulating layer formed between the semiconductor layer and the third electrode. The insulating layer contains an aromatic polyamide comprising a substituent containing 1 to 20 carbon atoms.
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