SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

This semiconductor device has: a silicon carbide semiconductor substrate (5); a transistor formed in a cell region (R1) of the semiconductor substrate (5); and a high withstand voltage structure formed in a region (R2) that surrounds the outer circumference of the cell region (R1). The semiconductor substrate (5) has: a first conductivity-type substrate (1); a first conductivity-type drift layer (2) on the first conductivity-type substrate (1); a second conductivity-type layer (3) on the drift layer (2); and a first conductivity-type layer (4) on the second conductivity-type layer (3). The high withstand voltage structure has: a first recessed section (17), which surrounds the outer circumference of the cell region (R1), and reaches the drift layer (2); a trench (13, 45) that surrounds the outer circumference of the cell region (R1), said trench being at a position on the side surface on the inner circumferential side of the first recessed section (17); and a second conductivity-type embedded layer (15, 46), which is embedded in the trench (13, 45), and constitutes the side surface of the first recessed section (17).