发明名称 |
3D ARCHITECTURE FOR BIPOLAR MEMORY USING BIPOLAR ACCESS DEVICE |
摘要 |
Memory device and method for fabricating a memory device on two layers of a semiconductor wafer. An example device includes bit lines and word lines fabricated at one layer of a semiconductor wafer and re-writable nonvolatile memory cells that include a two-terminal access device with a bidirectional voltage-current characteristics for positive and negative voltages applied at the terminals. Additionally, a drive circuit electrically coupled to the memory cells and configured to program the memory cells is fabricated at another layer of the semiconductor wafer. Another example embodiment includes a memory device where a plurality of memory arrays are fabricated at one layer of a semiconductor wafer and a plurality of drive circuits electrically coupled to the memory cells and configured to read the memory cells are fabricated at a second layer of the semiconductor wafer.
|
申请公布号 |
US2013039110(A1) |
申请公布日期 |
2013.02.14 |
申请号 |
US201113209405 |
申请日期 |
2011.08.14 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;LAM CHUNG H.;LI JING;GOPALAKRISHNAN KAILASH |
发明人 |
LAM CHUNG H.;LI JING;GOPALAKRISHNAN KAILASH |
分类号 |
G11C5/02;H01L21/02 |
主分类号 |
G11C5/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|