CHEMICAL MECHANICAL POLISHING SOLUTION

摘要

Disclosed is a chemical mechanical polishing solution for shallow trench isolation. The polishing fluid at least comprises an abrasive containing cerium dioxide, an organic phosphonic acid, a pH regulator, and carrier water, and has a high rate in removing high-density plasma silicon dioxide and a low rate in removing silicon nitride. The polished surface is planar and smooth, and has good stability. The present invention is applicable to chemical mechanical planarization for shallow trench isolation.