发明名称 |
Semiconductor device and method for manufacturing semiconductor device |
摘要 |
An object is to provide a semiconductor device which is not easily broken even if stressed externally and a method for manufacturing such a semiconductor device. A semiconductor device includes an element layer including a transistor in which a channel is formed in a semiconductor layer and insulating layers which are formed as an upper layer and a lower layer of the transistor respectively, and a plurality of projecting members provided at intervals of from 2 to 200 μm on a surface of the element layer. The longitudinal elastic modulus of the material for forming the plurality of projecting members is lower than that of the materials of the insulating layers.
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申请公布号 |
US8373172(B2) |
申请公布日期 |
2013.02.12 |
申请号 |
US201113174952 |
申请日期 |
2011.07.01 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;OHNUMA HIDETO |
发明人 |
OHNUMA HIDETO |
分类号 |
H01L21/46;H01L23/52;H01L27/088;H01L33/00 |
主分类号 |
H01L21/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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