发明名称 Semiconductor device and method for manufacturing semiconductor device
摘要 An object is to provide a semiconductor device which is not easily broken even if stressed externally and a method for manufacturing such a semiconductor device. A semiconductor device includes an element layer including a transistor in which a channel is formed in a semiconductor layer and insulating layers which are formed as an upper layer and a lower layer of the transistor respectively, and a plurality of projecting members provided at intervals of from 2 to 200 μm on a surface of the element layer. The longitudinal elastic modulus of the material for forming the plurality of projecting members is lower than that of the materials of the insulating layers.
申请公布号 US8373172(B2) 申请公布日期 2013.02.12
申请号 US201113174952 申请日期 2011.07.01
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;OHNUMA HIDETO 发明人 OHNUMA HIDETO
分类号 H01L21/46;H01L23/52;H01L27/088;H01L33/00 主分类号 H01L21/46
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