| 摘要 |
PURPOSE: A power semiconductor device is provided to protect a device from surge by forming a surge path in an edge region. CONSTITUTION: An active region and a termination region include a first conductive substrate region(110) and a first conductive semiconductor region(120). A first gate(153a) is formed in the active region. A second conductive column region(141-148) is formed in the termination region. A first gate control unit is electrically connected to the first gate and the second conductive column region. At least one second conductive well region(131,132) is formed in the first conductive semiconductor region. A first conductive source region(152) is formed in the second conductive well region.
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