发明名称 Integrated circuit devices with ESD protection in scribe line, and methods for fabricating same
摘要 A semiconductor wafer including an electrostatic discharge (ESD) protective device, and methods for fabricating the same. In one aspect, the method includes forming a first semiconductor device in a first semiconductor die region on the semiconductor wafer; forming a second semiconductor device in a second semiconductor die region on the semiconductor wafer; and forming a protective device in a scribe line region between (i) the first semiconductor die region and (ii) the second semiconductor die region.
申请公布号 US8372729(B1) 申请公布日期 2013.02.12
申请号 US201113285928 申请日期 2011.10.31
申请人 MARVELL INTERNATIONAL LTD.;CHENG CHUAN-CHENG;LI CHOY HING;YU SHUHUA 发明人 CHENG CHUAN-CHENG;LI CHOY HING;YU SHUHUA
分类号 H01L23/48;H01L23/485;H01L23/58 主分类号 H01L23/48
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