发明名称 |
Integrated circuit devices with ESD protection in scribe line, and methods for fabricating same |
摘要 |
A semiconductor wafer including an electrostatic discharge (ESD) protective device, and methods for fabricating the same. In one aspect, the method includes forming a first semiconductor device in a first semiconductor die region on the semiconductor wafer; forming a second semiconductor device in a second semiconductor die region on the semiconductor wafer; and forming a protective device in a scribe line region between (i) the first semiconductor die region and (ii) the second semiconductor die region.
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申请公布号 |
US8372729(B1) |
申请公布日期 |
2013.02.12 |
申请号 |
US201113285928 |
申请日期 |
2011.10.31 |
申请人 |
MARVELL INTERNATIONAL LTD.;CHENG CHUAN-CHENG;LI CHOY HING;YU SHUHUA |
发明人 |
CHENG CHUAN-CHENG;LI CHOY HING;YU SHUHUA |
分类号 |
H01L23/48;H01L23/485;H01L23/58 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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