发明名称 |
Method for programming a semiconductor magnetic memory integrating a magnetic tunneling junction above a floating-gate memory cell |
摘要 |
A semiconductor magnetic memory device has a magnetic tunneling junction formed over a memory cell. The memory cell has a control gate surrounded by a floating gate. The floating gate is coupled to the magnetic tunneling junction through a pinning layer that maintains the magnetic orientation of the lower magnetic layer of the junction. A current through a selected word line, coupled to the control gate, generates a first magnetic field. A current through a cell select line generates a second magnetic field that is orthogonal to the first magnetic field. This changes the magnetic orientation of the upper magnetic layer of the junction to lower its resistance, thus allowing a write/erase voltage on a program/erase line to program/erase the floating gate.
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申请公布号 |
US8374037(B2) |
申请公布日期 |
2013.02.12 |
申请号 |
US201113186796 |
申请日期 |
2011.07.20 |
申请人 |
MICRON TECHNOLOGY, INC.;BANERJEE PARAG;GAFRON TERRY;GONZALEZ FERNANDO |
发明人 |
BANERJEE PARAG;GAFRON TERRY;GONZALEZ FERNANDO |
分类号 |
G11C16/10 |
主分类号 |
G11C16/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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