发明名称 Integrated circuit chips with fine-line metal and over-passivation metal
摘要 An integrated circuit chip includes a silicon substrate, a first circuit in or over said silicon substrate, a second circuit device in or over said silicon substrate, a dielectric structure over said silicon substrate, a first interconnecting structure in said dielectric structure, a first pad connected to said first node of said voltage regulator through said first interconnecting structure, a second interconnecting structure in said dielectric structure, a second pad connected to said first node of said internal circuit through said second interconnecting structure, a passivation layer over said dielectric structure, wherein multiple opening in said passivation layer exposes said first and second pads, and a third interconnecting structure over said passivation layer and over said first and second pads.
申请公布号 US8373202(B2) 申请公布日期 2013.02.12
申请号 US20070864931 申请日期 2007.09.29
申请人 MEGICA CORPORATION;LIN MOU-SHIUNG;LEE JIN-YUAN;CHOU CHIEN-KANG 发明人 LIN MOU-SHIUNG;LEE JIN-YUAN;CHOU CHIEN-KANG
分类号 H01L23/52;H01L21/70;H01L23/528 主分类号 H01L23/52
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