发明名称 Voltage biasing circuit and data processing system having the same
摘要 A voltage biasing circuit includes a metal-oxide-semiconductor (MOS) transistor, a voltage control circuit controlling a voltage between a gate and a source of the MOS transistor to operate the MOS transistor in a sub-threshold range, and a capacitor connected to the MOS transistor. The voltage biasing circuit may further include a voltage buffer connected between the voltage control circuit and the MOS transistor.
申请公布号 US8373500(B2) 申请公布日期 2013.02.12
申请号 US20100684459 申请日期 2010.01.08
申请人 SAMSUNG ELECTRONICS CO., LTD.;YU JIN HYUCK 发明人 YU JIN HYUCK
分类号 G05F1/10 主分类号 G05F1/10
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