| 摘要 |
PURPOSE: A plasma processing apparatus is provided to improve durability against plasma etching by installing a plurality of cover members in an opening of a chamber. CONSTITUTION: A chamber(10) is formed with a square pillar shape to process a display substrate(S). An opening part(50) is formed in one side of the chamber. A gate valve(60) is installed outside the opening part. A susceptor(20) is installed on the lower side of the chamber. A process gas supply unit(30) is installed on the upper side of the chamber. A first electrode(41) is formed on the upper side of the process space. |
