发明名称 |
COMPOSITE SUBSTRATE AND MANUFACTURING METHOD THEREFOR, AND COMPOSITE WAFER |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a composite substrate on which a group III nitride epitaxial layer can be formed without causing any warpage or cracking, even if a substrate having a chemical composition different from that of a group III nitride and a group III nitride layer are bonded in the composite substrate, and to provide a manufacturing method therefor. <P>SOLUTION: The composite substrate 2D includes a substrate 10 having a chemical composition other than that of a group III nitride, and a group III nitride layer 21 bonded to the substrate 10 of different composition. The group III nitride layer 21 is separated into multiple group III nitride tiles 21p each having at least one kind of planar shape capable of tessellation. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2013030617(A) |
申请公布日期 |
2013.02.07 |
申请号 |
JP20110165654 |
申请日期 |
2011.07.28 |
申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
YOSHIDA TAKAHISA;KYONO TAKASHI;YOSHIZUMI YUSUKE;ISHIHARA KUNIAKI |
分类号 |
H01L21/20;C30B25/18;C30B29/38;H01L21/02 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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