发明名称 FORMATION OF FILM
摘要 PURPOSE:To form a film less in surface deforming and small in internal stress by ionizing an evaporation material in an inert gaseous atmosphere, controlling the density of ion flow and adhering the ionized evaporation material on a base impressed by a reversed polarity voltage. CONSTITUTION:The inert gasses are introduced from a gas conducting part 10 to a vacuum chamber 1 exhausted to vacuum via a conductor 2 and the evaporation material 4 composed of a single metal or alloy is evaporated by an evaporation source 3 composed of an electric gun or the like. The evapora tion is ionized by an anode 5 for ionization, drawn to a base support dome 8 biased by an electric power source 9 negatively and the evaporation material 4 is adhered on the base to form a film. At that time, the pressure of the inert gas, the vapor pressure of the evaporation material 4 and the energy impressed to the anode 5 for ionization and/or a voltage or the like impressed to the base are controlled to control the density of ion flow, which flows to the base preferable at 0.05-0.15mA/cm<2>.
申请公布号 JPS6167767(A) 申请公布日期 1986.04.07
申请号 JP19840188875 申请日期 1984.09.11
申请人 CANON INC 发明人 KUWABARA TETSUO
分类号 C23C14/32;C23C14/54 主分类号 C23C14/32
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