发明名称 METAL THIN SHIELD ON ELECTRICAL DEVICE
摘要 <p>This disclosure provides systems and methods for forming a metal thin film shield over a thin film cap to protect electromechanical systems devices in a cavity beneath. In one aspect, a dual or multi layer thin film structure is used to seal a electromechanical device. For example, a metal thin film shield can be mated over an oxide thin film cap to encapsulate the electromechanical device and prevent degradation due to wafer thinning, dicing and package assembly induced stresses, thereby strengthening the survivability of the electromechanical device in the encapsulated cavity. During redistribution layer processing, a metal thin film shield, such as a copper layer, is formed over the wafer surface, patterned and metalized.</p>
申请公布号 WO2013019515(A1) 申请公布日期 2013.02.07
申请号 WO2012US48172 申请日期 2012.07.25
申请人 QUALCOMM MEMS TECHNOLOGIES, INC.;LIN, PENG CHENG;VELEZ, MARIO FRANCISCO 发明人 LIN, PENG CHENG;VELEZ, MARIO FRANCISCO
分类号 B81B7/00 主分类号 B81B7/00
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